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January 2008
Single N-Channel, Logic Level, PowerTrench MOSFET
FDC855N
30V, 6.1A, 27m ?
?
tm
Features
Max r DS(on) = 27m ? at V GS = 10V, I D = 6.1A
Max r DS(on) = 36m ? at V GS = 4.5V, I D = 5.3A
SuperSOT TM -6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick).
RoHS Compliant
General Description
This N-Channel Logic Level MOSFET is an efficient solution for
low voltage and battery powered applications. Utilizing Fairchild
Semiconductor’s advanced PowerTrench ? process, this device
possesses minimized on-state resistance to optimize the power
consumption. They are ideal for applications where in-line power
loss is critical.
Application
Power Management in Notebook, Hard Disk Drive
D
S
D
D
D
D
D
SuperSOT TM -6
G
D
D
G
S
Pin 1
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
30
±20
Units
V
V
I D
Drain Current -Continuous
-Pulsed
T A = 25°C
(Note 1a)
6.1
20
A
P D
Power Dissipation
Power Dissipation
(Steady State)
(Steady State)
(Note 1a)
(Note 1b)
1.6
0.8
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
30
78
°C/W
Package Marking and Ordering Information
Device Marking
.855
Device
FDC855N
Package
SuperSOT-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
?2008 Fairchild Semiconductor Corporation
FDC855N Rev.C
1
www.fairchildsemi.com
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